RF LDMOS Wideband Integrated Power Amplifiers
Freescale Semiconductor Technical Data
Document Number: A2I20D020N Rev. 0, 5/2016
RF LDMOS Wideband Integrated Power A...
Description
Freescale Semiconductor Technical Data
Document Number: A2I20D020N Rev. 0, 5/2016
RF LDMOS Wideband Integrated Power Amplifiers
The A2I20D020N wideband integrated circuit is designed with on--chip matching that makes it usable from 1400 to 2200 MHz. This multi--stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.
1800–2200 MHz
Typical Single--Carrier W--CDMA Characterization Performance: VDD = 28 Vdc, IDQ1(A+B) = 32 mA, IDQ2(A+B) = 110 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency
Gps (dB)
PAE (%)
1800 MHz
31.0 19.7
1900 MHz
31.0 21.7
2000 MHz
31.1 22.1
2100 MHz
31.4 21.1
2200 MHz
32.0 19.6
1. All data measured in fixture with device soldered to heatsink.
ACPR (dBc)
–44.3 –45.0 –45.2 –45.2 –44.8
Features
Extremely Wide RF Bandwidth RF Decoupled Drain Pins Reduce Overall Board Space On--Chip Matching (50 Ohm Input, DC Blocked) Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (2)
A2I20D020NR1 A2I20D020GNR1
1400–2200 MHz, 2.5 W AVG., 28 V AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
TO--270WB--17 PLASTIC
A2I20D020NR1
TO--270WBG--17 PLASTIC
A2I20D020GNR1
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF. Select Documentation/Application Notes...
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