62T03GH

Advanced Power Electronics Corp. AP62T03GH/J RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic D BVDSS 30V RDS(ON) 12mΩ G ID 54A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, □ ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S TO-252(H) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy3 IAR TSTG TJ Avalanche Current Storage Temperature Range Operating Junction Temperature Range G D S TO-251(J) Rating 30 +20 54 38 120 47 0.31 20 20 -55 to 175 -55 to 175 Units V V A A A W W/℃ mJ A ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)4 Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value 3.2 62.5 110 Units ℃/W ℃/W ℃/W 1 200903124 AP62T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test C...