MMBT3906L

Small Signal Product MMBT3906L Taiwan Semiconductor 350mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) SOT-23 MECHANICAL DATA - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260oC/10s - Weight: 8 mg (approximately) - Marking Code: 3E. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation PD 350 Collector-Base Voltage VCBO -40 Collector-Emitter Voltage VCEO -40 Emitter-Base Voltage VEBO -5 Collector Current IC -200 Thermal Resistance Junction-Ambient RθJA 357 Junction and Storage Temperature Range TJ , TSTG -55 to + 150 Notes:1. Valid provided that electrodes are kept at ambient temperature UNIT mW V V V mA oC/W oC PARAMETER Collector-Base Breakdown Voltage IC = 10 μA IE = 0 Collector-Emitter Breakdown Voltage IC = -1 mA IB = 0 Emitter-Base Breakdown Voltage IE = -10 μA IC = 0 Collector Base Cut-off Current VCB = -40 V Emitter Base Cut-off Current VEB = -6 V VCE = -1 V IC = -0.1 mA VCE = -1 V IC = -1 mA DC Current Gain VCE = -1 V IC = -10 mA VCE = -1 V IC = -50 mA VCE = -1 V IC = -100 mA Collector-Emitte...