HRLO125N06K

HRLO125N06K Jan 2016 HRLO125N06K 60V N-Channel Trench MOSFET Features ‰ High Dense Cell Design ‰ Reliable and Rugged ‰ Advanced Trench Process Technology Application ‰ Power Management in Inverter System ‰ Synchronous Rectification Key Parameters Parameter BVDSS ID RDS(on), typ @10V RDS(on), typ @4.5V Value 60 10 12.5 14.0 Unit V A Pȍ Pȍ Package & Internal Circuit SOP-8 Absolute Maximum Ratings TA=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TA = 25୅ TA = 70୅ (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation TA = 25୅ TA = 70୅ Operating and Storage Temperature Range 60 ρ20 10 8 40 123 3.1 2.0 -55 to +150 Units V V A A A mJ W W ୅ Thermal Resistance Characteristics Symbol Parameter RșJL Junction-to-Lead Junction-to-Ambient (t”10s) RșJA Junction-to-Ambient (steady state) Typ. ---- Max. 24 40 75 Units ୅/W ୅/W ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝ͻΒΟ͑ͣͧ͑͢͡ HRLO125N06K Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance Off Characteristics VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 9 A VDS = 5, ID = 10 A 1.0 ---- BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS = 0 V, I...