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HRO400N10K Dataheets PDF



Part Number HRO400N10K
Manufacturers SemiHow
Logo SemiHow
Description N-Channel Trench MOSFET
Datasheet HRO400N10K DatasheetHRO400N10K Datasheet (PDF)

HRO400N10K Jan 2016 HRO400N10K 100V N-Channel Trench MOSFET Features ‰ High Dense Cell Design ‰ Reliable and Rugged ‰ Advanced Trench Process Technology Key Parameters Parameter BVDSS ID RDS(on), typ Value 100 6.3 33 Unit V A Pȍ Application ‰ Power Management in Inverter System ‰ Synchronous Rectification Package & Internal Circuit SOP-8 Absolute Maximum Ratings TA=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Sourc.

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HRO400N10K Jan 2016 HRO400N10K 100V N-Channel Trench MOSFET Features ‰ High Dense Cell Design ‰ Reliable and Rugged ‰ Advanced Trench Process Technology Key Parameters Parameter BVDSS ID RDS(on), typ Value 100 6.3 33 Unit V A Pȍ Application ‰ Power Management in Inverter System ‰ Synchronous Rectification Package & Internal Circuit SOP-8 Absolute Maximum Ratings TA=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TA = 25୅ TA = 70୅ (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation TA = 25୅ TA = 70୅ Operating and Storage Temperature Range 100 ρ20 6.3 5.0 25 60 3.1 2.0 -55 to +150 Units V V A A A mJ W W ୅ Thermal Resistance Characteristics Symbol Parameter RșJL Junction-to-Lead Junction-to-Ambient (t”10s) RșJA Junction-to-Ambient (steady state) Typ. ---- Max. 24 40 75 Units ୅/W ୅/W ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝ͻΒΟ͑ͣͧ͑͢͡ HRO400N10K Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 6.3 A 2.0 -- gFS Forward Transconductance Off Characteristics VDS = 5, ID = 6.3 A -- BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS = 0 V, ID = 250 Ꮃ VDS = 80 V, VGS = 0 V VDS = 80 V, TJ = 125୅ VGS = ρ20 V, VDS = 0 V 100 ---- Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Switching Characteristics VDS = 25 V, VGS = 0 V, f = 1.0 MHz VGS = 0 V, VDS = 0 V, f = 1MHz ----- td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 50 V, ID = 6.3 A, RG = 6 Ÿ VDS = 80 V, ID = 6.3 A, VGS = 10 V Source-Drain Diode Maximum Ratings and Characteristics -------- IS Continuous Source-Drain Diode Forward Current ISM Pulsed Source-Drain Diode Forward Current VSD Source-Drain Diode Forward Voltage IS = 6.3 A, VGS = 0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge IS = 6.3 A, VGS = 0 V diF/dt = 100 A/ȝV ------ -- 4.0 33 40 16 -- -- --- 1 -- 100 -- ρ100 2770 140 90 1.2 ----- 36 -19 -123 -22 -50 65 10 -13 -- -- 6.3 -- 25 -- 1.3 40 -70 -- V mŸ S V Ꮃ Ꮃ Ꮂ Ꮔ Ꮔ Ꮔ Ÿ Ꭸ Ꭸ Ꭸ Ꭸ nC nC nC A V Ꭸ nC Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=9.5A, VDD=25V, RG=25:, Starting TJ =25qC క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝ͻΒΟ͑ͣͧ͑͢͡ HRO400N10K Typical Characteristics ID, Drain Current [A] DS(ON)R [m:], Drain-Source On-Resistance 60 VGS Top : 10 V 8V 7V 6V 5.5 V 40 5 V 4.5 V Bottom : 4 V 20 * Notes : 1. 300us Pulse Test 2. TC = 25oC 0 012345 VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics 120 VGS = 10V 90 60 30 Note : TJ = 25oC.



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