Document
HRO400N10K
Jan 2016
HRO400N10K
100V N-Channel Trench MOSFET
Features
High Dense Cell Design Reliable and Rugged Advanced Trench Process Technology
Key Parameters
Parameter BVDSS ID
RDS(on), typ
Value 100 6.3 33
Unit V A Pȍ
Application
Power Management in Inverter System Synchronous Rectification
Package & Internal Circuit
SOP-8
Absolute Maximum Ratings TA=25 unless otherwise specified
Symbol
Parameter
Value
VDSS VGS ID IDM EAS PD TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current Pulsed Drain Current
TA = 25 TA = 70
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation
TA = 25 TA = 70
Operating and Storage Temperature Range
100 ρ20 6.3 5.0 25 60 3.1 2.0 -55 to +150
Units V V A A A mJ W W
Thermal Resistance Characteristics
Symbol
Parameter
RșJL Junction-to-Lead
Junction-to-Ambient (t10s) RșJA
Junction-to-Ambient (steady state)
Typ. ----
Max. 24 40 75
Units /W /W /W
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HRO400N10K
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 6.3 A
2.0 --
gFS Forward Transconductance
Off Characteristics
VDS = 5, ID = 6.3 A
--
BVDSS IDSS IGSS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS = 0 V, ID = 250 Ꮃ VDS = 80 V, VGS = 0 V VDS = 80 V, TJ = 125 VGS = ρ20 V, VDS = 0 V
100 ----
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance
Switching Characteristics
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
-----
td(on) Turn-On Time tr Turn-On Rise Time
td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS = 50 V, ID = 6.3 A, RG = 6
VDS = 80 V, ID = 6.3 A, VGS = 10 V
Source-Drain Diode Maximum Ratings and Characteristics
--------
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 6.3 A, VGS = 0 V
trr Reverse Recovery Time Qrr Reverse Recovery Charge
IS = 6.3 A, VGS = 0 V diF/dt = 100 A/ȝV
------
-- 4.0 33 40 16 --
-- --- 1 -- 100 -- ρ100
2770 140 90 1.2
-----
36 -19 -123 -22 -50 65 10 -13 --
-- 6.3 -- 25 -- 1.3 40 -70 --
V m S
V Ꮃ Ꮃ Ꮂ
Ꮔ Ꮔ Ꮔ
Ꭸ Ꭸ Ꭸ Ꭸ nC nC nC
A
V Ꭸ nC
Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=9.5A, VDD=25V, RG=25:, Starting TJ =25qC
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HRO400N10K
Typical Characteristics
ID, Drain Current [A]
DS(ON)R [m:], Drain-Source On-Resistance
60
VGS Top : 10 V
8V 7V 6V 5.5 V
40 5 V
4.5 V Bottom : 4 V
20 * Notes : 1. 300us Pulse Test 2. TC = 25oC
0 012345
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
120 VGS = 10V
90
60
30
Note : TJ = 25oC.
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