N-Channel Trench MOSFET
HRO400N10K
Jan 2016
HRO400N10K
100V N-Channel Trench MOSFET
Features
High Dense Cell Design Reliable and Rugged ...
Description
HRO400N10K
Jan 2016
HRO400N10K
100V N-Channel Trench MOSFET
Features
High Dense Cell Design Reliable and Rugged Advanced Trench Process Technology
Key Parameters
Parameter BVDSS ID
RDS(on), typ
Value 100 6.3 33
Unit V A Pȍ
Application
Power Management in Inverter System Synchronous Rectification
Package & Internal Circuit
SOP-8
Absolute Maximum Ratings TA=25 unless otherwise specified
Symbol
Parameter
Value
VDSS VGS ID IDM EAS PD TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current Pulsed Drain Current
TA = 25 TA = 70
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation
TA = 25 TA = 70
Operating and Storage Temperature Range
100 ρ20 6.3 5.0 25 60 3.1 2.0 -55 to +150
Units V V A A A mJ W W
Thermal Resistance Characteristics
Symbol
Parameter
RșJL Junction-to-Lead
Junction-to-Ambient (t10s) RșJA
Junction-to-Ambient (steady state)
Typ. ----
Max. 24 40 75
Units /W /W /W
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HRO400N10K
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 6.3 A
2.0 --
gFS Forward Transconductance
Off Characteristics
VDS = 5, ID = 6.3 A
--
BVDSS IDSS IGSS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS = 0 V, ID = 250 Ꮃ VDS = 80 V, VGS = 0 V VDS = 80 V, TJ...
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