HRP105N15H

HRP105N15H Jan 2016 HRP105N15H 150V N-Channel Trench MOSFET Features ‰ High Speed Power Switching, Logic Level ‰ Enhanced Body diode dv/dt capability ‰ Enhanced Avalanche Ruggedness ‰ 100% UIS Tested, 100% Rg Tested ‰ Lead free, Halogen Free Application ‰ Synchronous Rectification in SMPS ‰ Hard Switching and High Speed Circuit ‰ Power Tools ‰ UPS & Motor Control Key Parameters Parameter BVDSS ID RDS(on), typ Value 150 120 8.8 Unit V A Pȍ Package & Internal Circuit TO-220 G D S Absolute Maximum Ratings TJ=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25୅ TC = 100୅ Single Pulsed Avalanche Energy L=0.4mH Power Dissipation TC = 25୅ Operating and Storage Temperature Range 150 ρ20 120 85 400 845 333 -55 to +175 Units V V A A A mJ W ୅ Thermal Resistance Characteristics Symbol Parameter RșJC RșJA Junction-to-Case Junction-to-Ambient Typ. --- Max. 0.45 62.5 Units ୅/W ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΒΟ͑ͣͧ͑͢͡ HRP105N15H Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS Gate Threshold Voltage Static Drain-Source RDS(ON) On-Resistance VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 20 A 2.0 -- gFS Forward Transconductance Off Characteristics VDS = 5 V, ID = 20 A -- BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Le...