HRP100N08K

HRP100N08K HRP100N08K 80V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 73 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 8.5 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 80 V RDS(on) typ = 8.5 mΩ ID = 65 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25℃) - Derate above 25℃ 80 65 46 230 ±25 210 8.8 88 0.59 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +175 300 Units V A A A V mJ mJ W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max. 1.7 -62.5 Units ℃/W ◎ SEMIHOW REV.A0,December 2014 HRP100N08K Electrical Characteristics TJ=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS Gate Threshold Voltage Static Drain-Source RDS(ON) On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 40 A 2.2 -- gFS Forward Transco...