N-Channel Trench MOSFET
HRS105N15H
Jan 2016
HRS105N15H
150V N-Channel Trench MOSFET
Features
High Speed Power Switching, Logic Level Enha...
Description
HRS105N15H
Jan 2016
HRS105N15H
150V N-Channel Trench MOSFET
Features
High Speed Power Switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead free, Halogen Free
Application
Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools UPS & Motor Control
Key Parameters
Parameter BVDSS ID
RDS(on), typ
Value 150 120 8.8
Unit V A Pȍ
Package & Internal Circuit
TO-220F
G D S
Absolute Maximum Ratings TJ=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
TC = 25 TC = 100
IDM Pulsed Drain Current
EAS
Single Pulsed Avalanche Energy
L=0.4mH
PD Power Dissipation
TC = 25
TJ, TSTG
Operating and Storage Temperature Range
* Drain current limited by maximum junction temperature
150 ρ20 120 * 85 * 400 * 845 40 -55 to +175
Units V V A A A mJ W
Thermal Resistance Characteristics
Symbol
Parameter
RșJC RșJA
Junction-to-Case Junction-to-Ambient
Typ. ---
Max. 3.7 62.5
Units /W /W
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HRS105N15H
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 20 A
2.0 --
gFS Forward Transconductance
Off Characteristics
VDS = 5 V, ID = 20 A
--
BVDSS IDSS IGSS
Drain-Sour...
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