N-Channel Trench MOSFET
HRW105N15H_HRI105N15H
Fab 2016
HRW105N15H/HRI105N15H
150V N-Channel Trench MOSFET
Features
High Speed Power Switchi...
Description
HRW105N15H_HRI105N15H
Fab 2016
HRW105N15H/HRI105N15H
150V N-Channel Trench MOSFET
Features
High Speed Power Switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead free, Halogen Free
Application
Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools UPS & Motor Control
Key Parameters
Parameter BVDSS ID
RDS(on), typ
Value 150 120 8.8
Unit V A Pȍ
Package & Internal Circuit
D2-PAK
(HRW105N15H)
D
I2-PAK
(HRI105N15H)
D
G S
G D S
Absolute Maximum Ratings TJ=25 unless otherwise specified
Symbol
Parameter
Value
VDSS VGS
ID
IDM EAS PD TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current Pulsed Drain Current
TC = 25 TC = 100
Single Pulsed Avalanche Energy
L=0.4mH
Power Dissipation
TC = 25
Operating and Storage Temperature Range
150 ρ20 120 85 400 845 333 -55 to +175
Units V V A A A mJ W
Thermal Resistance Characteristics
Symbol
Parameter
RșJC RșJA
Junction-to-Case Junction-to-Ambient
Typ. ---
Max. 0.45 62.5
Units /W /W
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HRW105N15H_HRI105N15H
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 20 A
2.0 --
gFS Forward Transconductance
Off Characteristics
VDS = 5 V, ID = 20 A
--
BVDSS IDSS IGSS...
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