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KSU13003E

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NPN Silicon Power Transistor

KSX13003E Series KSB13003E KSU13003E / KSD13003E NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 1.5A Genera...


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KSU13003E

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Description
KSX13003E Series KSB13003E KSU13003E / KSD13003E NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 1.5A General Description High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150୅ Max. Operating temperature 8KV ESD proof at HBM (C=100໲, R=1.5໰) Features VCBO = 700V VCEO = 400V VBEO = 9V IC = 1.5A TO-92 TO-251 TO-252 2 3 2 1 3 2 1 3 1 Ordering Information Ordering number KSB13003E KSB13003ER KSU13003E KSU13003ER KSD13003E KSD13003ER Package TO-92 TO-92 TO-251 TO-251 TO-252 TO-252 Pin Assignment 123 BCE ECB BCE ECB BCE ECB Packing Ammo Ammo Tube Tube Reel Reel క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡ KSX13003E Series KSB13003E KSU13003E / KSD13003E NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 1.5A Absolute Maximum Ratings TC=25୅ unless otherwise noted CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25୅) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC ICP IB PC TJ TSTG TO-92 1.1 RATING 700 400 9 1.5 3 0.75 150 -65~150 TO-251(2) 25 UNIT V V V A A A W ୅ ୅ Electrical Characteristics TC=25୅ unless otherwise noted CHARACTERISTICS SYMBOL Test Condition Collector-Base Breakdown Voltage VCBO IC=500ȝA, IE=0 Collector-Emitter Breakdown Voltage VCEO IC=10mA, IB=0 Emitter Cut-off Current IEBO VEB=9V,IC=0 *DC Current Gain hFE1 hFE2 VCE=5V,IC=0....




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