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KSD741

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NPN Silicon Power Transistor

KSX741 Series KSD741 KSP741 NPN Silicon Power Transistor, VCBO= 1050V, VCEO= 500V, IC= 2A General Description • High v...


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KSD741

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Description
KSX741 Series KSD741 KSP741 NPN Silicon Power Transistor, VCBO= 1050V, VCEO= 500V, IC= 2A General Description High voltage, high speed power switching Suitable for switching regulator, inverters, motor controls Features VCBO = 1050V VCEO = 500V VBEO = 15V IC = 2A TO-252 TO-220 3 2 1 3 2 1 Ordering Information Ordering number KSD741 KSP741 Package TO-252 TO-220 Pin Assignment 123 BCE BCE Packing Reel Tube క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͲΡΣΚΝ͑ͣͦ͑͢͡ KSX741 Series KSD741 KSP741 NPN Silicon Power Transistor, VCBO= 1050V, VCEO= 500V, IC= 2A Absolute Maximum Ratings TC=25୅ unless otherwise noted CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25୅) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC ICP IB PC TJ TSTG TO-252 30 RATING 1050 500 15 2 4 1 150 -65~150 TO-220 60 UNIT V V V A A A W ୅ ୅ Electrical Characteristics (1) TC=25୅ unless otherwise noted CHARACTERISTICS SYMBOL Test Condition Collector-Base Breakdown Voltage VCBO IC=500ȝA, IE=0 Collector-Emitter Breakdown Voltage VCEO IC=5mA, IB=0 Emitter-Base Breakdown Voltage VEBO IE=1mA, IC=0 Emitter Cut-off Current IEBO VEB=15V,IC=0 DC Current Gain hFE1 hFE2 VCE=5V,IC=100mA VCE=3V,IC=450mA Collector-Emitter Saturation Voltage VCE(sat) IC=0.7A,IB=0.14A IC=2.0A,IB=0.6A Base-Emitter Saturation Voltage VBE(sat) IC=2.0A,IB=0.6A Output Capacitance Cob VCB=1...




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