KSX741 Series
KSD741 KSP741
NPN Silicon Power Transistor, VCBO= 1050V, VCEO= 500V, IC= 2A
General Description
• High v...
KSX741 Series
KSD741 KSP741
NPN Silicon Power
Transistor, VCBO= 1050V, VCEO= 500V, IC= 2A
General Description
High voltage, high speed power switching Suitable for switching
regulator, inverters, motor controls
Features
VCBO = 1050V VCEO = 500V VBEO = 15V IC = 2A
TO-252
TO-220
3 2
1
3 2
1
Ordering Information
Ordering number KSD741 KSP741
Package
TO-252 TO-220
Pin Assignment 123 BCE BCE
Packing
Reel Tube
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KSX741 Series
KSD741 KSP741
NPN Silicon Power
Transistor, VCBO= 1050V, VCEO= 500V, IC= 2A
Absolute Maximum Ratings TC=25 unless otherwise noted
CHARACTERISTICS
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25) Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO
IC ICP IB PC TJ TSTG
TO-252 30
RATING
1050 500 15
2 4 1
150 -65~150
TO-220 60
UNIT
V V V A A A W
Electrical Characteristics (1) TC=25 unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Collector-Base Breakdown Voltage
VCBO
IC=500ȝA, IE=0
Collector-Emitter Breakdown Voltage
VCEO
IC=5mA, IB=0
Emitter-Base Breakdown Voltage
VEBO
IE=1mA, IC=0
Emitter Cut-off Current
IEBO VEB=15V,IC=0
DC Current Gain
hFE1 hFE2
VCE=5V,IC=100mA VCE=3V,IC=450mA
Collector-Emitter Saturation Voltage
VCE(sat)
IC=0.7A,IB=0.14A IC=2.0A,IB=0.6A
Base-Emitter Saturation Voltage
VBE(sat) IC=2.0A,IB=0.6A
Output Capacitance
Cob VCB=1...