KSU13003C

KSX13003C Series KSB13003C KSU13003C NPN Silicon Power Transistor, VCBO= 800V, VCEO= 450V, IC= 1.5A General Description High voltage, High speed power switching Suitable for Electronic Ballast up to 21W Features VCBO = 800V VCEO = 450V VBEO = 9V IC = 1.5A TO-92 TO-251 3 2 1 3 2 1 Ordering Information Ordering number KSB13003C KSB13003CR KSU13003C KSU13003CR Package TO-92 TO-92 TO-251 TO-251 Pin Assignment 123 BCE ECB BCE ECB Packing Ammo Ammo Tube Tube క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͻΒΟΦΒΣΪ͑ͣͣ͑͢͡ KSX13003C Series KSB13003C KSU13003C NPN Silicon Power Transistor, VCBO= 800V, VCEO= 450V, IC= 1.5A Absolute Maximum Ratings TC=25୅ unless otherwise noted CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25୅) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC ICP IB PC TJ TSTG TO-92 1.1 RATING 800 450 9 1.5 3 0.75 150 -65~150 TO-251 25 UNIT V V V A A A W ୅ ୅ Electrical Characteristics TC=25୅ unless otherwise noted CHARACTERISTICS SYMBOL Test Condition Collector-Base Breakdown Voltage VCBO IC=500ȝA, IE=0 Collector-Emitter Breakdown Voltage VCEO IC=10mA, IB=0 Emitter Cut-off Current IEBO VEB=9V,IC=0 *DC Current Gain hFE1 hFE2 VCE=5V,IC=0.2A VCE=5V,IC=1A *Collector-Emitter Saturation Voltage VCE(sat) IC=0.5A,IB=0.1A *Base-Emitter Saturation Voltage VBE(sat) IC=0.5A,IB=0.1A Output Capacitance Cob VCB=10V, f=0....