KSD13003ER/KSU13003ER
KSD13003ER KSU13003ER
◎ SEMIHOW REV.A0,July 2011
KSD13003ER/KSU13003ER
KSD13003ER/KSU13003ER
H...
KSD13003ER/KSU13003ER
KSD13003ER KSU13003ER
◎ SEMIHOW REV.A0,July 2011
KSD13003ER/KSU13003ER
KSD13003ER/KSU13003ER
High Voltage Switch Mode Application
High Voltage, High Speed Switching Suitable for Switching
regulator, Inverters motor controls 150℃ Max. Operating temperature 8KV ESD proof at HBM (C=100㎊, R=1.5㏀)
Absolute Maximum Ratings TC=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Storage Temperature Max. Operating Junction Temperature
VCBO VCEO VEBO
IC ICP IB PC TSTG TJ
700 400
9 1.5 3 0.75 25 -65~150 150
UNIT
V V V A A A W ℃ ℃
1.5 Amperes
NPN Silicon Power
Transistor 25 Watts
TO-252 / TO-251 1. Emitter 2. Collector 3. Base
D-PAK I-PAK
2
1 3
1 2 3
KSD13003ER KSU13003ER
Electrical Characteristics TC=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter Cut-off Current *DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Output Capacitance Current Gain Bandwidth Product Turn on Time Storage Time Fall Time
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
VCBO VCEO IEBO hFE1 hFE2 VCE(sat)
VBE(sat)
Cob fT ton tstg tF
IC=500μA, IE=0
IC=1mA, IB=0
VEB=9V,IC=0
VCE=10V,IC=400mA VCE=10V,IC=1.5A
IC=0.5A,IB=0.1A IC=1A,IB=0.25A IC=1.5A,IB=0.5A
IC=0.5A,IB=0.1A IC=1A...