KSX742C Series
KSP742C
NPN Silicon Power Transistor, VCBO= 1050V, VCEO= 500V, IC= 4A
General Description
• High voltag...
KSX742C Series
KSP742C
NPN Silicon Power
Transistor, VCBO= 1050V, VCEO= 500V, IC= 4A
General Description
High voltage, high speed power switching Suitable for switching
regulator, inverters, motor controls
Features
VCBO = 1050V VCEO = 500V VBEO = 15V IC = 4A
TO-220
3 2
1
Ordering Information
Ordering number KSP742C
Package TO-220
Pin Assignment 123 BCE
Packing Tube
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KSX742C Series
KSP742C
NPN Silicon Power
Transistor, VCBO= 1050V, VCEO= 500V, IC= 4A
Absolute Maximum Ratings TC=25 unless otherwise noted
CHARACTERISTICS
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25) Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC ICP IB PC TJ TSTG
RATING TO-220
1050 500 15
4 8 2 70 150 -65~150
UNIT
V V V A A A W
Electrical Characteristics (1) TC=25 unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Collector-Base Breakdown Voltage
VCBO
IC=500ȝA, IE=0
Collector-Emitter Breakdown Voltage
VCEO
IC=5mA, IB=0
Emitter-Base Breakdown Voltage
VEBO
IE=1mA, IC=0
Emitter Cut-off Current
IEBO VEB=15V,IC=0
DC Current Gain
hFE1 hFE2
VCE=5V,IC=0.1A VCE=3V,IC=0.8A
Collector-Emitter Saturation Voltage
VCE(sat)
IC=1.0A,IB=0.2A IC=3.5A,IB=1.0A
Base-Emitter Saturation Voltage
VBE(sat) IC=3.5A,IB=1.0A
Output Capacitance
Cob VCB=10V, f=0.1MHz
Storage Time
tstg
Ic=500mA, IB=10mA (UI9600)
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