RFPD3580

RFPD3580 GaAs/GaN Power Doubler Hybrid 45MHz to 1218MHz The RFPD3580 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT die and GaN HEMT die and operates from 45MHz to 1218MHz. It provides extremely high output up to 76.8dBmV composite power or 67dBmV virtual level. DC current as well as supply voltage of the device can be externally adjusted for optimum distortion performance versus power consumption over a wide range of output level. Current setting V+ INPUT OUTPUT Functional Block Diagram RFMD + TriQuint = Qorvo RFPD3580 Package: SOT-115J Features ■ Extremely High Output Capability ■ Excellent Linearity ■ Superior Return Loss Performance ■ Optimal Reliability ■ Unconditionally Stable Under All Terminations ■ 22.5dB Min. Gain at 1218MHz ■ 550mA Max. ■ Devices works at V+ between 24V and 34V Applications ■ 45MHz to 1218MHz CATV Amplifier Systems ■ DOCSIS 3.1 Compliant Ordering Information RFPD3580 Box with 50 pieces Revision DS20160304 © 2016RF Micro Devices, Inc. - 1 of 8 - Disclaimer: Subject to change without notice www.rfmd.com / www.qorvo.com RFPD3580 Absolute Maximum Ratings Parameter RF Input Voltage (single tone) DC Supply Over-Voltage (5 minutes) Storage Temperature Operating Mounting Base Temperature RFMD + TriQuint = Qorvo Rating 75 38 -40 to +100 -30 to +100 Unit dBmV V °C °C Caution! ESD sensitive device. RoHS status based on EU Directive 2011/65/EU . Exceeding any one or a combination of the Absolute Maximum Rating condition...