SIS990DN

SiS990DN Vishay Siliconix Dual N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) 0.085 at VGS = 10 V 0.090 at VGS = 7.5 V 0.105 at VGS = 6 V ID (A)f 12.1 11.8 10.9 Qg (Typ.) 3.3 nC PowerPAK® 1212-8 3.30 mm D1 8 D1 7 D2 6 D2 5 S1 1 G1 2 3.30 mm S2 3 G2 4 Bottom View FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS DC/DC Conversion Primary side switch Synchronous Rectification Industrial 48 V Battery Monitoring LED Driver D1 G1 G2 D2 Ordering Information: SiS990DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET S1 N-Channel MOSFET S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TA = 70 °C TC = 25 °C TA = 25 °C IDM IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg Limit 100 ± 20 12.1 9.7 4.1a, b 3.2a, b 20 20 2.3a, b 7 2.5 25 16 2.8a, b 1.8a, b - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Ma...