Document
CLX27 HiRel X-Band GaAs Power-MESFET • • • • • • •
HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 500 MHz to 15 GHz Hermetically sealed microwave power package Low thermal resistance for high voltage application Power added efficiency > 55 % Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5614/007, Type Variant No.s 04 to 06
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering Code
Pin Configuration 1 2 S 3 D
Package
CLX27-00 (ql) CLX27-05 (ql) CLX27-10 (ql)
-
see below
G
MWP-25
CLX27-nn: specifies output power level (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality,
Ordering Code: Ordering Code: Ordering Code: Ordering Code:
Q62702L119 on request on request Q62702L118
(see order instructions for ordering example)
Semiconductor Group
1 of 9
Draft D, September 99
CLX27
Maximum Ratings
Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Gate forward current Compression Level 1) Operation Range 1
Symbol VDS VDG VGS ID IG PC
Values 11 13 -6 420 5 1.5 at VDS ≤ 8 V 2.5 at VDS ≤ 7 V 3.5 at VDS ≤ 6 V
Unit V V V mA mA dB
Compression Level 2) Operation Range 2 Compression Level 3) Operation Range 3 Junction temperature Storage temperature range Total power dissipation 4) Soldering temperature Thermal Resistance Junction-soldering point Notes.:
5)
PC PC TJ Tstg Ptot Tsol
3.5 at VDS ≤ 6 V tbd. 175 - 65...+ 175 3.38 230
dB dB °C °C W °C
Rth JS
≤ 40
K/W
1) Operation Range 1: 80 mA ≤ ID ≤ 160 mA 2) Operation Range 2: ID > 160 mA 3) Operation Range 3: ID < 80 mA 4) At TS = + 40 °C. For TS > + 40 °C derating is required. 5) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed.
Semiconductor Group
2 of 9
Draft D, September 99
CLX27
Electrical Characteristics (at TA=25°C; unless otherwise specified)
Parameter
Symbol min.
Values typ. max.
Unit
DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V Gate threshold voltage VDS = 3 V, ID = 12 mA Drain current at pinch-off, low VDS VDS = 3 V, VGS = -3.5 V Gate current at pinch-off, low VDS VDS = 3 V, VGS = -3.5 V Drain current at pinch-off, high VDS VDS = 9.5 V, VGS = -3.5 V Gate current at pinch-off, high VDS VDS = 9.5 V, VGS = -3.5 V Transconductance VDS = 3 V, ID = 120 mA Thermal resistance Junction to soldering point VDS = 8 V, ID = 120 mA, Ts = +25°C Rth JS 35 K/W gm 130 160 mS -IGp9.5 240 µA IDp9.5 600 µA -IGp3 24 µA IDp3 60 µA -VGth 1.2 2.2 3.2 V IDss 180 300 420 mA
Semiconductor Group
3 of 9
Draft D, September 99
CLX27
Electrical Characteristics (continued)
Parameter
Symbol min.
Values typ. max.
Unit
AC Characteristics Linear power gain 1) VDS = 8 V, ID = 120 mA, f = 2.3 GHz, Pin = 0 dBm CLX27-00 CLX27-05 CLX27-10 Power output at 1dB gain compr. 1) VDS = 8 V, ID(RF off) = 120 mA,.