MMUN2211…MMUN2241
NPN Silicon Epitaxial Planar Transistor
for switching and interface circuit and drive circuit applicat...
MMUN2211…MMUN2241
NPN Silicon Epitaxial Planar
Transistor
for switching and interface circuit and drive circuit applications
Resistor Values Type
MMUN2211 MMUN2212 MMUN2213 MMUN2214 MMUN2215 MMUN2216 MMUN2230 MMUN2231 MMUN2232 MMUN2233 MMUN2234 MMUN2235 MMUN2238 MMUN2241
R1 (K) 10 22 47 10 10 4.7 1 2.2 4.7 4.7 22 2.2 2.2 100
R2 (K) 10 22 47 47 ∞
∞ 1 2.2 4.7 47 47 47 ∞ ∞
SOT-23 Plastic Package
Base (Input)
R1 R2
Collector (Output)
Emitter (Common)
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range
Symbol
VCBO VCEO
IC Ptot Tj TS
Value 50 50 100 200 150
- 55 to + 150
Unit V V mA
mW OC OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 17/08/2007
MMUN2211…MMUN2241
Characteristics at Ta = 25 OC Parameter
DC Current Gain at VCE = 10 V, IC = 5 mA
Collector Base Cutoff Current at VCB = 50 V Collector Emitter Cutoff Current at VCE = 50 V Emitter Base Cutoff Current at VEB = 6 V
Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 2 mA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.3 mA at IC = 10 mA, IB = 5 mA at IC = 10 mA, IB = 1 mA
Symbol
MMUN2211 MMUN2212 MMUN2213 MMUN2214 MMUN2215 MMUN2216 MMUN2230 MMUN2231 MMUN2232 MMUN2233 MMUN2234 MMUN2235 MMUN2238 MMUN2241
hFE hFE hFE ...