Document
CLX34 HiRel X-Band GaAs Power-MESFET • • • • • • •
HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 500 MHz to 10 GHz Hermetically sealed microwave power package Low thermal resistance for high voltage application Power added efficiency > 53 % Component Under Development, Package Modifications Foreseen
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering Code
Pin Configuration 1 2 S 3 D
Package
CLX34-00 (ql) CLX34-05 (ql) CLX34-10 (ql)
-
see below
G
MWP-25 tbc.
CLX34-nn: specifies output power level (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality,
Ordering Code: Ordering Code: Ordering Code: Ordering Code:
on request on request on request on request
(see order instructions for ordering example)
Semiconductor Group
1 of 10
Draft D, September 99
CLX34
Maximum Ratings
Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Gate forward current Compression Level 1) Operation Range 1
Symbol VDS VDG VGS ID IG PC
Values 11 13 -6 2000 10 1.5 at VDS ≤ 8 V 2.5 at VDS ≤ 7 V 3.5 at VDS ≤ 6 V
Unit V V V mA mA dB
Compression Level 2) Operation Range 2 Compression Level 3) Operation Range 3 Junction temperature Storage temperature range Total power dissipation
4)
PC PC TJ Tstg Ptot Tsol
3.5 at VDS ≤ 6 V tbd. 175 - 65...+ 175 5.4 230
dB dB °C °C W °C
Soldering temperature 5) Thermal Resistance Junction-soldering point Notes.:
Rth JS
≤ 20
K/W
1) Operation Range 1: 400 mA ≤ ID ≤ 800 mA 2) Operation Range 2: ID > 800 mA 3) Operation Range 3: ID < 400 mA 4) At TS = + 40 °C. For TS > + 40 °C derating is required. 5) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed.
Semiconductor Group
2 of 10
Draft D, September 99
CLX34
Electrical Characteristics (at TA=25°C; unless otherwise specified)
Parameter
Symbol min.
Values typ. max.
Unit
DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V Gate threshold voltage VDS = 3 V, ID = 60 mA Drain current at pinch-off, low VDS VDS = 3 V, VGS = -3.5 V Gate current at pinch-off, low VDS VDS = 3 V, VGS = -3.5 V Drain current at pinch-off, high VDS VDS = 9.5 V, VGS = -3.5 V Gate current at pinch-off, high VDS VDS = 9.5 V, VGS = -3.5 V Transconductance VDS = 3 V, ID = 600 mA Thermal resistance Junction to soldering point VDS = 8 V, ID = 600 mA, Ts = +25°C Rth JS 16 K/W gm 660 780 mS -IGp9.5 1200 µA IDp9.5 3000 µA -IGp3 120 µA IDp3 400 µA -VGth 1.2 2.2 3.2 V IDss 900 1500 2000 mA
Semiconductor Group
3 of 10
Draft D, September 99
CLX34
Electrical Characteristics (continued)
Parameter
Symbol min.
Values typ. max.
Unit
AC Characteristics Linear power gain 1) VDS = 8 V, ID = 600 mA, f = 2.3 GHz, Pin = 11 dBm CLX34-00 CLX34-05 CLX34-10 Power output at 1dB gain compr.
1)
Glp
dB
13.5 14.0 14.0 P1dB
14.5 15.0 15.0
dB.