Voltage Suppressors. SM8S20 Datasheet

SM8S20 Datasheet PDF, Equivalent


Part Number

SM8S20

Description

Transient Voltage Suppressors

Manufacture

Vishay

Total Page 5 Pages
PDF Download
Download SM8S20 Datasheet


SM8S20 Datasheet
www.vishay.com
SM8S10 thru SM8S43A
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
DO-218AB
PRIMARY CHARACTERISTICS
VBR
PPPM (10 x 1000 μs)
PPPM (10 x 10 000 μs)
PD
VWM
IFSM
TJ max.
Polarity
11.1 V to 52.8 V
6600 W
5200 W
8W
10 V to 43 V
700 A
175 °C
Uni-directional
Package
DO-218AB
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• TJ = 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
with 10/1000 μs waveform
with 10/10 000 μs waveform
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
Note
(1) Non-repetitive current pulse derated above TA = 25 °C
SYMBOL
PPPM
PD
IPPM (1)
IFSM
TJ, TSTG
VALUE
6600
5200
8.0
See next table
700
-55 to +175
UNIT
W
W
A
A
°C
Revision: 18-Sep-12
1 Document Number: 88387
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SM8S20 Datasheet
www.vishay.com
SM8S10 thru SM8S43A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
DEVICE
TYPE
BREAKDOWN
VOLTAGE
VBR (V)
MIN.
MAX.
TEST STAND-OFF
CURRENT VOLTAGE
IT
(mA)
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA)
MAXIMUM REVERSE
LEAKAGE
AT VWM
TJ = 175 °C
ID (μA)
SM8S10
11.1
13.6
5.0
10.0
15
250
MAX. PEAK
PULSE CURRENT
AT 10/1000 μs
WAVEFORM
(A)
351
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
18.8
SM8S10A 11.1
12.3
5.0
10.0
15
250
388 17.0
SM8S11
12.2
14.9
5.0
11.0
10
150
328 20.1
SM8S11A 12.2
13.5
5.0
11.0
10
150
363 18.2
SM8S12
13.3
16.3
5.0
12.0
10
150
300 22.0
SM8S12A 13.3
14.7
5.0
12.0
10
150
332 19.9
SM8S13
14.4
17.6
5.0
13.0
10
150
277 23.8
SM8S13A 14.4
15.9
5.0
13.0
10
150
307 21.5
SM8S14
15.6
19.1
5.0
14.0
10
150
256 25.8
SM8S14A 15.6
17.2
5.0
14.0
10
150
284 23.2
SM8S15
16.7
20.4
5.0
15.0
10
150
245 26.9
SM8S15A 16.7
18.5
5.0
15.0
10
150
270 24.4
SM8S16
17.8
21.8
5.0
16.0
10
150
229 28.8
SM8S16A 17.8
19.7
5.0
16.0
10
150
254 26.0
SM8S17
18.9
23.1
5.0
17.0
10
150
216 30.5
SM8S17A 18.9
20.9
5.0
17.0
10
150
239 27.6
SM8S18
20.0
24.4
5.0
18.0
10
150
205 32.2
SM8S18A 20.0
22.1
5.0
18.0
10
150
226 29.2
SM8S20
22.2
27.1
5.0
20.0
10
150
184 35.8
SM8S20A 22.2
24.5
5.0
20.0
10
150
204 32.4
SM8S22
24.4
29.8
5.0
22.0
10
150
168 39.4
SM8S22A 24.4
26.9
5.0
22.0
10
150
186 35.5
SM8S24
26.7
32.6
5.0
24.0
10
150
153 43.0
SM8S24A 26.7
29.5
5.0
24.0
10
150
170 38.9
SM8S26
28.9
35.3
5.0
26.0
10
150
142 46.6
SM8S26A 28.9
31.9
5.0
26.0
10
150
157 42.1
SM8S28
31.1
38.0
5.0
28.0
10
150
132 50.1
SM8S28A 31.1
34.4
5.0
28.0
10
150
145 45.4
SM8S30
33.3
40.7
5.0
30.0
10
150
123 53.5
SM8S30A 33.3
36.8
5.0
30.0
10
150
136 48.4
SM8S33
36.7
44.9
5.0
33.0
10
150
112 59.0
SM8S33A 36.7
40.6
5.0
33.0
10
150
124 53.3
SM8S36
40.0
48.9
5.0
36.0
10
150
103 64.3
SM8S36A 40.0
44.2
5.0
36.0
10
150
114 58.1
SM8S40
44.4
54.3
5.0
40
10
150
92.4 71.4
SM8S40A 44.4
49.1
5.0
40
10
150
102 64.5
SM8S43
47.8
58.4
5.0
43
10
150
86 76.7
SM8S43A 47.8
52.8
5.0
43
10
150
95.1 69.4
Note
• For all types maximum VF = 1.8 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum
Revision: 18-Sep-12
2 Document Number: 88387
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features Datasheet pdf www.vishay.com SM8S10 thru SM8S43A Vish ay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors Hi gh Temperature Stability and High Relia bility Conditions DO-218AB PRIMARY CH ARACTERISTICS VBR PPPM (10 x 1000 μs) PPPM (10 x 10 000 μs) PD VWM IFSM TJ max. Polarity 11.1 V to 52.8 V 6600 W 5200 W 8W 10 V to 43 V 700 A 175 °C Un i-directional Package DO-218AB FEATU RES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and auto motive requirement • Available in uni -directional polarity only • Low leak age current • Low forward voltage dro p • High surge capability • Meets I SO7637-2 surge specification (varied by test condition) • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • AEC-Q101 qualified • Material categorization: For definitions of com pliance please see www.vishay.com/doc?9 9912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transie.
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