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JCS630

JILIN SINO-MICROELECTRONICS

N-CHANNEL MOSFET

R JCS630 MAIN CHARACTERISTICS ID VDSS Rdson(@Vgs=10V) Qg 9.0A 200 V 0.4Ω 22nC Package N N- CHANNEL MOSFET  ...


JILIN SINO-MICROELECTRONICS

JCS630

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Description
R JCS630 MAIN CHARACTERISTICS ID VDSS Rdson(@Vgs=10V) Qg 9.0A 200 V 0.4Ω 22nC Package N N- CHANNEL MOSFET    UPS APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  UPS   Crss ( 22pF)    dv/dt RoHS FEATURES Low gate charge Low Crss (typical 22pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes JCS630V-O-V-N-B JCS630R-O-R-N-B JCS630R-O-R-N-A JCS630S-O-S-N-B JCS630B-O-B-N-B JCS630C-O-C-N-B JCS630F-O- F-N-B Marking JCS630V JCS630R JCS630R JCS630S JCS630B JCS630C JCS630F Package Halogen Free Packaging IPAK DPAK DPAK TO-263 TO-262 TO-220C TO-220MF NO NO NO NO NO NO NO Tube Tube Brede Tube Tube Tube Tube Device Weight 0.35 g(typ) 0.30 g(typ) 0.30 g(typ) 1.37 g(typ) 1.71 g(typ) 2.15 g(typ) 2.20 g(typ) :201505C 1/14 R ABSOLUTE RATINGS (Tc=25℃) Value JCS630V/R JCS630S/B/C Parameter Symbol - Drain-Source Voltage VDSS 200 Drain Current -continuous ID T=25℃ T=100℃ 9.0 5.7 ( 1) Drain Current -pulse (note 1) Gate-Source Voltage IDM VGSS 36 ±30 ( 2) Single Pulsed Avalanche Energy (note 2) ( 1) Avalanche Current (note 1) EAS IAR 160 9.0 ( 1) Repetitive Avalanche Current (note 1) EAR 7.2 ( 3) Peak Diode Recovery dv/dt (note 3) dv/dt 5.5 Power Dissipation PD TC=25℃ -Derate above 25℃ 48 0.39 72 0.57 Operating and Storage Temperature Range TJ,TSTG -55~+150 Maximum Lead Tempe...




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