PN2222A / 2N2222A
PN2222A / 2N2222A
NPN
General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistor...
PN2222A / 2N2222A
PN2222A / 2N2222A
NPN
General purpose Si-Epitaxial Planar
Transistors Si-Epitaxial Planar-
Transistoren für universellen Einsatz
Version 2005-11-17
Power dissipation Verlustleistung
E BC
Plastic case Kunststoffgehäuse
16 9 18
Weight approx. – Gewicht ca.
2 x 2.54
Dimensions / Maße [mm]
Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack
NPN
625 mW TO-92 (10D3) 0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. - Kollektor-Emitter-Spannung E open
Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open
Emitter-Base-voltage - Emitter-Basis-Spannung
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom (tp < 5 ms) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur
VCB0 VCE0 VEB0 Ptot IC ICM Tj TS
Grenzwerte (TA = 25°C) PN2222A / 2N2222A
75 V 40 V 6V 625 mW 1) 600 mA 800 mA -65...+150°C -65…+150°C
Characteristics (Tj = 25°C)
Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 60 V
Collector saturation voltage – Kollektor-Sättigungsspannung IC = 150 mA, IB = 15 mA 2) IC = 500 mA, IB = 50 mA 2)
Base saturation-voltage – Basis-Sättigungsspannung IC = 150 mA, IB = 15 mA 2) IC = 500 mA, IB = 50 mA 2)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
ICB0 –
– 10 nA
VCEsat VCEsat
– –
– 0.3 V – 1V
VBEsat
0.6...