Silicon Controlled Rectifiers
SemiWell Semiconductor
Preliminary
BT151-600
Silicon Controlled Rectifiers
Symbol
Features
◆ Repetitive Peak Off-Sta...
Description
SemiWell Semiconductor
Preliminary
BT151-600
Silicon Controlled Rectifiers
Symbol
Features
◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 12 A ) ◆ Low On-State Voltage (1.4V(Typ.)@ ITM) ◆ Non-isolated Type
General Description
Standard gate triggering SCR is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system.
○
2. Anode TO-220
123
▼
3. Gate
○
○
1. Cathode
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM IT(AV) IT(RMS)
ITSM I2t
Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing
Half Sine Wave : TC = 111 °C 180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave Non-Repetitive
t = 8.3ms
di/dt Critical rate of rise of on-state current
PGM PG(AV) IFGM VRGM
TJ TSTG
Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature
Over any 20ms period
Ratings
600 7.6 12
120
72 50 5 0.5 2 5 - 40 ~ 125 - 40 ~ 150
Units
V A A
A
A2s
A/㎲
W W A V °C °C
Oct, 2003. Rev. 0
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
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BT151-600
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Items
Condi...
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