IGBT
Advance Technical Information
XPTTM 650V IGBT GenX3TM w/ Diode
IXYK100N65C3D1 IXYX100N65C3D1
Extreme Light Punch Thro...
Description
Advance Technical Information
XPTTM 650V IGBT GenX3TM w/ Diode
IXYK100N65C3D1 IXYX100N65C3D1
Extreme Light Punch Through IGBT for 20-60kHz Switching
VCES = 650V IC110 = 100A VCE(sat) 2.3V tfi(typ) = 60ns
TO-264 (IXYK)
Symbol
VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM
IA EAS
SSOA
(RBSOA)
tsc (SCSOA)
PC TJ TJM Tstg TL TSOLD Md FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
650 V 650 V
±20 V ±30 V
TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 110°C TC = 25°C, 1ms
TC = 25°C TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C RG = 10, Non Repetitive
TC = 25°C
200 160 100
67 420
50 600
ICM = 200
@VCE VCES
7
830 -55 ... +175
175 -55 ... +175
A A A A A A mJ A
μs
W °C °C °C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-264) Mounting Force (PLUS247)
300 260 1.13/10 20..120 /4.5..27
°C °C Nm/lb.in N/lb
TO-264 PLUS247
10 g 6g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 70A, VGE = 15V, Note 1 TJ = 150°C
Characteristic Values Min. Typ. Max.
650 V
3.5 6.0 V
50 μA 3 mA
±100 nA
1.8 2.3 V 2.2 V
G C E
PLUS247 (IXYX)
Tab
G
G C
E
Tab
G = Gate C = Collector
E = Emitter Tab = Collector
Features
International Standard Pa...
Similar Datasheet
- IXYK100N65C3D1 IGBT - IXYS