IXYN100N65A3

650V XPTTM IGBT GenX3TM Ultra Low-Vsat PT IGBT for up to 5kHz Switching Preliminary Technical Information IXYN100N65A3 VCES = 650V IC110 = 100A VCE(sat)  1.80V tfi(typ) = 122ns E Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C 50/60Hz t = 1min IISOL  1mA t = 1s Mounting Torque Terminal Connection Torque Maximum Ratings 650 650 ±20 ±30 V V V V 170 A 100 A 460 A 50 A 600 mJ ICM = 200 VCE VCES 8 A μs 600 -55 ... +175 175 -55 ... +175 2500 3000 1.5/13 1.3/11.5 30 W °C °C °C V~ V~ Nm/lb.in Nm/lb.in g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 70A, VGE = 15V, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max. 650 V 3.5 6.0 V 25 μA 500 μA ±200 nA 1.44 1.62 1.80 V V SOT-227B, miniBLOC E153432 E G E C G = Gate, C = Collector, E = Emitter either emitter terminal can be used as Main or Kelvin Emitter Features  Optimized for Low Conduction Losses  miniBLOC, with Aluminium Nitride Isolation  International Standard Package  Isolation Voltage 2500V~  Optimized for u...