IXYP10N65B3D1

Advance Technical Information XPTTM 650V IGBT GenX3TM w/Diode IXYP10N65B3D1 Extreme Light Punch Through IGBT for 5-30kHz Switching VCES = 650V IC110 = 10A VCE(sat)  1.95V tfi(typ) = 30ns TO-220 Symbol VCES VCGR VGES VGEM IC25 IC110 IIFC1M10 IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TTCC = 110°C = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 50 Clamped Inductive Load VGE = 15V, VCE = 400V, TJ = 150°C RG = 150, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 650 V 650 V ±20 V ±30 V 32 A 10 A 9A 62 A 5A 50 mJ ICM = 20 @VCE VCES 5 A μs 160 -55 ... +175 175 -55 ... +175 300 260 1.13/10 2.5 W °C °C °C °C °C Nm/lb.in. g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 10A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 650 V 4.0 6.5 V 10 A 350 A 100 nA 1.74 2.00 1.95 V V GC E Tab G = Gate E = Emitter C = Collector Tab = Collector Features  Optimized for 5-30kHz Switching  Square RBSOA  Avalanche Rated  Anti-Parallel Fast Diode  Short Circuit Capability  International Standard Package Advantages  High Power Den...