Document
MITSUBISHI IGBT MODULES
CM1000HA-24H
HIGH POWER SWITCHING USE INSULATED TYPE
A B U - M4 THD (2 TYP.)
R
K P
E
M
G
B S - M8 THD (2 TYP.)
A
C
E
C
J
G
Q T - DIA. (4 TYP.) H
L F N
E
D
Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM1000HA-24H is a 1200V (VCES), 1000 Ampere Single IGBT Module.
Type CM Current Rating Amperes 1000 VCES Volts (x 50) 24
E
C
G E
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 5.12 4.33±0.01 1.840 Millimeters 130.0 110.0±0.25 46.75 Dimensions L M N P Q R S T U Inches 0.79 0.77 0.75 0.61 0.51 0.35 M8 Metric 0.26 Dia. M4 Metric Millimeters 20.0 19.5 19.0 15.6 13.0 9.0 M8 Dia. 6.5 M4
1.73+0.04/–0.02 44.0+1.0/–0.5 1.46+0.04/–0.02 37.0+1.0/–0.5 1.42 1.25 1.18 1.10 1.08 36.0 31.8 30.0 28.0 27.5
Sep.1998
MITSUBISHI IGBT MODULES
CM1000HA-24H
HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (TC = 25°C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25°C) Mounting Torque, M8 Main Terminal Mounting, Torque M6 Mounting Mounting, Torque M4 Terminal Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – – Viso
CM1000HA-24H –40 to +150 –40 to +125 1200 ±20 1000 2000* 1000 2000* 5800 8.83 ~ 10.8 1.96 ~ 2.94 0.98 ~ 1.47 1600 2500
Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N·m N·m N·m Grams Vrma
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 100mA, VCE = 10V IC = 1000A, VGE = 15V IC = 1000A, VGE = 15V, Tj = 150°C Total Gate Charge Emitter-Collector Voltage VCC = 600V, IC = 1000A, VGE = 15V IE = 1000A, VGE = 0V Min. – – 4.5 – – – – Typ. – – 6.0 2.7 2.4 5000 – Max. 6 0.5 7.5 3.6** – – 3.5 Units mA µA Volts Volts Volts nC Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 1000A, diE/dt = –2000A/µs IE = 1000A, diE/dt = –2000A/µs VCC = 600V, IC = 1000A, VGE1 = VGE2 = 15V, RG = 3.3Ω VGE = 0V, VCE = 10V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 7.4 Max. 200 70 40 600 1500 1200 350 250 – Units nF nF nF ns ns ns ns ns µC
Diode Reverse Recovery Time Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.022 0.050 0.018 Units °C/W °C/W °C/W Sep.1998
MITSUBISHI IGBT MODULES
CM1000HA-24H
HIGH POWER SWITCHING USE INSULATED TYPE
OUTPUT CHARACTERISTICS (TYPICAL)
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
2000
VGE = 20 (V) 1600 Tj = 25°C
IC, (AMPERES)
15
12
2000
VCE = 10V Tj = 25°C Tj = 125°C
VCE(sat), (VOLTS)
5 VGE = 15V 4
1600 11
IC, (AMPERES)
1200 10 800
1200
3
800
2
400
9
8 7
400
1 Tj = 25°C Tj = 125°C
0
0
2
4
6
8
10
0 0 4 8 12 16 20
VGE, (VOLTS)
0
0
400
800
1200
1600
2000
VCE, (VOLTS)
IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
10
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
104 Tj = 25°C
Tj = 25°C
103
8
Cies, Coes, Cres.