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CM100BU-12H

Mitsubishi Electric Semiconductor

IGBT Module

MITSUBISHI IGBT MODULES CM100BU-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F E H E G R L S(4 - Mounting Holes) M ...


Mitsubishi Electric Semiconductor

CM100BU-12H

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Description
MITSUBISHI IGBT MODULES CM100BU-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F E H E G R L S(4 - Mounting Holes) M GuP EuP D GvP EvP GuN EuN U V C TC Measured Point GvN EvN P TC Measured Point Q 4 - M4 NUTS J E J H K F G V T U N L TAB#110 t=0.5 V W X P Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of four IGBTs in an H-Bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100BU-12H is a 600V (VCES), 100 Ampere FourIGBT Module. Type CM Current Rating Amperes 100 VCES Volts (x 50) 12 GuP EuP U GvP EvP V GuN EuN N GvN EvN Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L Inches 2.83 2.17±0.01 3.58 2.91±0.01 0.43 0.79 0.69 0.75 0.39 0.41 0.05 Millimeters 72.0 55±0.25 91.0 74.0±0.25 11.0 20.0 17.5 19.1 10.0 10.5 1.25 Dimensions M N P Q R S T U V W X Inches 0.74 0.02 1.55 0.63 0.57 0.22 Dia. 0.32 1.02 0.59 0.20 1.61 Millimeters 18.7 0.5 39.3 16.0 14....




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