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CM100DU-12F

Powerex Power Semiconductors

IGBT Module

CM100DU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual...


Powerex Power Semiconductors

CM100DU-12F

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CM100DU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 100 Amperes/600 Volts N P - NUTS (3 PLACES) TC MEASURING POINT A D Q (2 PLACES) E E2G2 CM C2E1 E2 C1 F G B H G1E1 F M K K J R C L G2 E2 RTC Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100DU-12F is a 600V (VCES), 100 Ampere Dual IGBTMOD™ Power Module. Type CM Current Rating Amperes 100 VCES Volts (x 50) 12 C2E1 E2 C1 RTC E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H Inches 3.70 1.89± 0.01 3.15 0.43 0.16 0.71 0.02 Millimeters 94.0 48.0± 0.25 80.0 11.0 4.0 18.0 0.5 Dimensions J K L M N P Q R Inches 0.53 0.91 1.13 0.67 0.28 M5 0.26 Dia. 0.16 Millimeters 13.5 23.0 28.7 17.0 7.0 M5 6.5 Dia. 4.0 1.18 +0.04/-0.02 30.0 +1.0/-0.5 1 Powerex, Inc., 200 Hillis Street, Youngwood, Penn...




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