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IXYH100N65C3 Dataheets PDF



Part Number IXYH100N65C3
Manufacturers IXYS
Logo IXYS
Description IGBT
Datasheet IXYH100N65C3 DatasheetIXYH100N65C3 Datasheet (PDF)

Preliminary Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60kHz Switching IXYH100N65C3 VCES = 650V IC110 = 100A VCE(sat)  2.3V tfi(typ) = 60ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C ( Chip Capability ) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V.

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Preliminary Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60kHz Switching IXYH100N65C3 VCES = 650V IC110 = 100A VCE(sat)  2.3V tfi(typ) = 60ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C ( Chip Capability ) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 10, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 650 650 ±20 ±30 V V V V 200 A 160 A 100 A 420 A 50 A 600 mJ ICM = 200 VCE VCES 7 A μs 830 -55 ... +175 175 -55 ... +175 300 260 1.13/10 6 W °C °C °C °C °C Nm/lb.in g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 70A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 650 V 3.5 6.0 V 25 A 750 A 100 nA 1.8 2.3 V 2.2 V TO-247 G CE G = Gate E = Emitter Tab C = Collector Tab = Collector Features  Optimized for 20-60kHz Switching  Square RBSOA  Avalanche Rated  Short Circuit Capability  High Current Handling Capability  International Standard Package Advantages  High Power Density  Low Gate Drive Requirement Applications  Power Inverters  UPS  Motor Drives  SMPS  PFC Circuits  Battery Chargers  Welding Machines  Lamp Ballasts © 2014 IXYS CORPORATION, All Rights Reserved DS100561B(10/14) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 100A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 400V, RG = 3 Note 2 td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 150°C IC = 50A, VGE = 15V VCE = 400V, RG = 3 Note 2 RthJC RthCS Characteristic Values Min. Typ. Max. 30 55 S 4780 280 102 pF pF pF 172 nC 30 nC 80 nC 23 ns 42 ns 1.30 mJ 107 ns 60 ns 0.83 1.30 mJ 24 ns 38 ns 2.55 mJ 134 ns 66 ns 1.15 mJ 0.18 °C/W 0.21 °C/W IXYH100N65C3 TO-247 (IXYH) Outline 1 - Gate 2,4 - Collector 3 - Emitter Notes: 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IC (A) IXYH100N65C3 140 120 100 80 60 40 20 0 0 Fig. 1. Output Characteristics @ TJ = 25ºC VGE = 15V 13V 12V 11V 10V 9V 8V 7V 0.5 1 1.5 2 2.5 3 VCE - Volts 3.5 140 120 100 80 60 40 20 0 0 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 7 Fig. 3. Output Characteristics @ TJ = 150ºC VGE = 15V 13V 12V 11V 10V 9V 8V 7V 6V 0.5 1 1.5 2 2.5 3 3.5 4 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage TJ = 25ºC I C = 140A 70A 35A 8 9 10 11 12 13 14 15 VGE (V) IC (A) VCE(sat) - Normalized IC (A) Fig. 2. Extended Output Characteristics @ TJ = 25ºC 300 VGE = 15V 13V 250 12V 200 150 11V 10V 100 9V 50 8V 0 7V 0 2 4 6 8 10 12 14 16 18 20 VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.0 VGE = 15V 1.8 I C = 140A 1.6 1.4 1.2 I C = 70A 1.0 0.8 I C = 35A 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Input Admittance 200 180 160 140 120 100 80 TJ = 150ºC 25ºC 60 - 40ºC 40 20 0 4 5 6 7 8 9 10 11 VGE (V) IC (A) VCE (V) © 2014 IXYS CORPORATION, All Rights Reserved IXYH100N65C3 g f s (S) 90 80 70 60 50 40 30 20 10 0 0 20 40 Fig. 7. Transconductance TJ = - 40ºC 25ºC 150ºC 60 80 100 120 140 160 180 200 IC (A) 10,000 Fig. 9. Capacitance 1,000 Cies Coes 100 Cres f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VCE (V) IC (A) VGE (V) 16 14 VCE = 325V IC = 70A 12 IG = 10mA 10 8 6 4 2 0 0 20 40 Fig. 8. Gate Charge 60 80 100 120 140 160 180 QG (nC) Fig. 10. Reverse-Bias Safe Operating Area 200 160 120 80 40 TJ = 150ºC RG = 3Ω dv / dt < 10V / ns 0 1.


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