Document
Preliminary Technical Information
XPTTM 650V IGBT GenX3TM
Extreme Light Punch Through IGBT for 20-60kHz Switching
IXYH100N65C3
VCES = 650V IC110 = 100A VCE(sat) 2.3V tfi(typ) = 60ns
Symbol
VCES VCGR VGES VGEM
IC25 ILRMS IC110 ICM
IA EAS
SSOA
(RBSOA)
tsc (SCSOA)
PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient
TC = 25°C ( Chip Capability ) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C RG = 10, Non Repetitive TC = 25°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque
Maximum Ratings
650 650
±20 ±30
V V
V V
200 A 160 A 100 A
420 A
50 A 600 mJ
ICM = 200
VCE VCES
7
A μs
830
-55 ... +175 175
-55 ... +175
300 260
1.13/10
6
W
°C °C °C
°C °C
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
70A,
VGE
=
15V,
Note
1 TJ
=
150C
Characteristic Values Min. Typ. Max.
650 V
3.5 6.0 V
25 A 750 A
100 nA
1.8 2.3 V 2.2 V
TO-247
G CE
G = Gate E = Emitter
Tab
C = Collector Tab = Collector
Features
Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability International Standard Package
Advantages
High Power Density Low Gate Drive Requirement
Applications
Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts
© 2014 IXYS CORPORATION, All Rights Reserved
DS100561B(10/14)
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 60A, VCE = 10V, Note 1
Cies Coes Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on) Qge Qgc
IC = 100A, VGE = 15V, VCE = 0.5 • VCES
td(on) tri Eon td(off) tfi Eoff
Inductive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 400V, RG = 3
Note 2
td(on) tri Eon td(off) tfi Eoff
Inductive load, TJ = 150°C IC = 50A, VGE = 15V VCE = 400V, RG = 3
Note 2
RthJC RthCS
Characteristic Values Min. Typ. Max.
30 55
S
4780 280 102
pF pF pF
172 nC 30 nC 80 nC
23 ns 42 ns 1.30 mJ 107 ns 60 ns 0.83 1.30 mJ
24 ns 38 ns 2.55 mJ 134 ns 66 ns 1.15 mJ
0.18 °C/W 0.21 °C/W
IXYH100N65C3
TO-247 (IXYH) Outline
1 - Gate 2,4 - Collector 3 - Emitter
Notes: 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844 5,017,508 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IC (A)
IXYH100N65C3
140 120 100
80 60 40 20
0 0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
13V 12V 11V
10V
9V
8V
7V
0.5 1 1.5 2 2.5 3
VCE - Volts
3.5
140
120
100
80
60
40
20
0 0
6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
7
Fig. 3. Output Characteristics @ TJ = 150ºC
VGE = 15V
13V 12V 11V
10V
9V
8V
7V 6V
0.5 1 1.5 2 2.5 3 3.5 4
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
TJ = 25ºC
I C = 140A 70A
35A
8 9 10 11 12 13 14 15
VGE (V)
IC (A)
VCE(sat) - Normalized
IC (A)
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
300 VGE = 15V 13V
250 12V
200
150
11V 10V
100 9V
50 8V
0 7V 0 2 4 6 8 10 12 14 16 18 20
VCE - Volts
Fig. 4. Dependence of VCE(sat) on Junction Temperature
2.0 VGE = 15V
1.8 I C = 140A
1.6
1.4
1.2 I C = 70A
1.0
0.8 I C = 35A
0.6 -50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Input Admittance
200
180
160
140
120
100
80
TJ = 150ºC 25ºC
60 - 40ºC
40
20
0 4 5 6 7 8 9 10 11
VGE (V)
IC (A)
VCE (V)
© 2014 IXYS CORPORATION, All Rights Reserved
IXYH100N65C3
g f s (S)
90 80 70 60 50 40 30 20 10
0 0
20 40
Fig. 7. Transconductance
TJ = - 40ºC 25ºC 150ºC
60 80 100 120 140 160 180 200
IC (A)
10,000
Fig. 9. Capacitance
1,000
Cies Coes
100 Cres
f = 1 MHz
10 0
5 10 15 20 25 30 35 40
VCE (V)
IC (A)
VGE (V)
16 14 VCE = 325V
IC = 70A 12 IG = 10mA
10
8
6
4
2
0 0 20 40
Fig. 8. Gate Charge
60 80 100 120 140 160 180
QG (nC)
Fig. 10. Reverse-Bias Safe Operating Area
200
160
120
80
40 TJ = 150ºC RG = 3Ω dv / dt < 10V / ns
0 1.