IGBT
XPTTM 650V IGBT
IXYH40N65C3H1
GenX3TM w/ Sonic Diode
Extreme Light Punch Through IGBT for 20-60 kHz Switching
Symbol...
Description
XPTTM 650V IGBT
IXYH40N65C3H1
GenX3TM w/ Sonic Diode
Extreme Light Punch Through IGBT for 20-60 kHz Switching
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 IF110 ICM
IA EAS
SSOA (RBSOA)
tsc (SCSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
Continuous Transient
TC = 25°C
TTCC
= 110°C = 110°C
TC = 25°C, 1ms
TC = 25°C TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load
VGE= 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650 V 650 V
±20 V ±30 V
80 A 40 A 40 A
180 A
20 A 300 mJ
ICM = 80
VCE VCES
5
A μs
300
-55 ... +175 175
-55 ... +175
300 260
1.13/10
6
W
°C °C °C
°C °C
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
40A,
VGE
=
15V,
Note
1 TJ
=
150C
Characteristic Values Min. Typ. Max.
650 V
3.5 6.0 V
50 A 3 mA
100 nA
2.00 2.40
2.35 V V
VCES = 650V IC110 = 40A VCE(sat) 2.35V tfi(typ) = 52ns
TO-247
G CE
G = Gate E = Emitter
Tab
C = Collector Tab = Collector
Features
Optimized for 20-60kHz Switching Square RBSOA Anti-Parallel Sonic Diode Avalanche Rated Short Circuit Capability International Standard Package
Advantages
High Power Density Extremely Rugge...
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