IXYX100N120C3

1200V XPTTM IGBTs GenX3TM High-Speed IGBT for 20-50 kHz Switching Preliminary Technical Information IXYK100N120C3 IXYX100N120C3 VCES = IC110 = V ≤CE(sat) tfi(typ) = 1200V 100A 3.5V 110ns TO-264 (IXYK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient 1200 1200 ±20 ±30 V V V V TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load TC = 25°C 188 160 100 490 50 1.2 ICM = 200 ≤@VCE VCES 1150 -55 ... +175 175 -55 ... +175 A A A A A J A W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Torque (TO-264) Mounting Force (PLUS247) 1.13/10 20..120 /4.5..27 Nm/lb.in. N/lb. TO-264 PLUS247 10 g 6g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = IC110, VGE = 15V, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 25 μA 1.25 mA ±100 nA 2.9 3.5 V 4.1 V G C E PLUS247 (IXYX) Tab G G C E Tab G = Gate C = Collector E = Emitter Tab = Collector Features z Optimized for Low Switching Losses z Square RBSOA z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z Hig...