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BTA26-600A

Inchange Semiconductor

Triacs

isc Triacs BTA26-600A FEATURES ·With TO-3P insulated package ·Suitable for general purpose where high surge current ca...



BTA26-600A

Inchange Semiconductor


Octopart Stock #: O-1031732

Findchips Stock #: 1031732-F

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Description
isc Triacs BTA26-600A FEATURES ·With TO-3P insulated package ·Suitable for general purpose where high surge current capability is required. application such as phase control and static switching on inductive or resistive load. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) RMS on-state current (full sine wave)Tj=90℃ ITSM Non-repetitive peak on-state current tp=8.3ms Tj Operating junction temperature Tstg Storage temperature PG(AV) Average gate power dissipation(Tj=125℃) Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient MIN UNIT 600 V 600 V 25 A 260 A 125 ℃ -45~150 ℃ 1 W 1.5 ℃/W 50 ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM, VR=VRRM, Tj=125℃ IDRM Repetitive peak off-state current VD=VDRM, VD=VDRM, Tj=125℃ Ⅰ IGT Gate trigger current Ⅱ VD=12V; RL= 33Ω Ⅲ Ⅳ IH Holding current IGT= 0.5A, Gate Open VGT Gate trigger voltage all quadrant VD=12V; RL= 33Ω VTM On-state voltage IT= 35A; tp= 380μs MAX 0.01 6.0 0.01 6.0 100 UNIT mA mA 100 mA 100 150 100 mA 1.5 V 1.7 V isc website:www.iscsemi.com isc & iscsemi is registered trademark NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at an...




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