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DMN10H120SFG

Diodes

N-Channel MOSFET

ADVANCE INFORMATION Product Summary V(BR)DSS 100V RDS(ON) max 110mΩ @ VGS = 10V 122mΩ @ VGS = 6.0V ID max TA = +25°C...


Diodes

DMN10H120SFG

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Description
ADVANCE INFORMATION Product Summary V(BR)DSS 100V RDS(ON) max 110mΩ @ VGS = 10V 122mΩ @ VGS = 6.0V ID max TA = +25°C 3.8 A 3.6 A Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Power Management Functions DC-DC Converters DMN10H120SFG 100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Features and Benefits Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: POWERDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish  Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) POWERDI3333-8 S Pin 1 S S G Top View D D D D Bottom View 18 27 36 45 Top View Internal Schematic Ordering Information (Note 4) Part Number DMN10H120SFG-7 DMN10H120SFG-13 Compliance Standard Standard Case POWERDI3333-8 POWERDI3333-8 Packaging 2000/Tape & Re...




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