DMN25D0UFA

Product Summary V(BR)DSS 25V RDS(on) 4Ω @ VGS = 4.5V 5Ω @ VGS = 2.7V ID TA = +25°C 0.32A 0.28A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Load switch Portable applications Power Management Functions DMN25D0UFA 25V N-CHANNEL ENHANCEMENT MODE MOSFET Features 0.4mm ultra low profile package for thin application 0.48mm2 package footprint, 16 times smaller than SOT23 Low VGS(th), can be driven directly from a battery Low RDS(on) ESD Protected Gate (>6kV Human Body Mode) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: X2-DFN0806-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.00043 grams (approximate) X2-DFN0806-3 Drain Gate Body Diode ESD HBM >6kV Bottom View Top View Package Pin Configuration Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMN25D0UFA-7B Compliance Standard Case X2-DFN0806-3 Packaging 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (Ro...