DMN30H4D0LFDE

NEW PRODUCT DMN30H4D0LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 300V RDS(ON) 4Ω @ VGS = 10V 4Ω @ VGS = 4.5V 6Ω @ VGS = 2.7V ID TA = +25°C 0.55A 0.55A 0.44A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Power management functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc U-DFN2020-6 Features 0.6mm profile – ideal for low profile applications PCB footprint of 4mm2 Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (approximate) D G Bottom View Pin Out Bottom View S Equivalent Circuit Ordering Information (Note 4) Part Number DMN30H4D0LFDE-7 DMN30H4D0LFDE-13 Compliance Standard Standard Case U-DFN2020-6 U-DFN2020-6 Quantity per reel 3,000 10,000 Notes: 1. No purposely added lead....