Document
NEW PRODUCT
DMN53D0LDW
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
BVDSS 50V
RDS(ON)
1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V
ID TA = +25°C
360mA 250mA
Description and Applications
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
Features and Benefits
Dual N-Channel MOSFET Low On-Resistance Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ An Automotive-Compliant Part is Available Under Separate Datasheet (DMN53D0LDWQ)
Mechanical Data
Case: SOT363 Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate)
D2
G1
S1
ESD PROTECTED
SOT363 Top View
S2
G2
D1
Top View Internal Schematic
Ordering Information (Note 4)
Part Number DMN53D0LDW-7 DMN53D0LDW-13
Case SOT363 SOT363
Packaging 3000/Tape & Reel 10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
MM5 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: I = 2021) M = Month (ex: 9 = September)
Date Code Key Year Code
2014
…
B
…
Month Code
Jan
Feb
1
2
DMN53D0LDW
Document number: DS37072 Rev. 3 - 2
2021 I
Mar 3
2022 J
Apr 4
2023 K
2024 L
2025 M
May
Jun
Jul
5
6
7
1 of 6 www.diodes.com
2026 N
Aug 8
2027 O
Sep 9
2028 P
Oct O
2029 R
2030 S
Nov
Dec
N
D
July 2021
© Diodes Incorporated
NEW PRODUCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain Source Voltage Gate-Source Voltage Drain Current (Note 5)
Characteristic
Symbol VDSS VGSS ID
DMN53D0LDW
Value
Unit
50
V
20
V
360
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range
Symbol PD RJA
TJ, TSTG
Value 310 411
-55 to +150
Unit mW C/W C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol Min
Typ
BVDSS
50
IDSS
IGSS
VGS(TH)
0.8
1.0
RDS(ON)
1.0
1.4
Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
VSD
0.8
Ciss
46
Coss
5.3
Crss
4.0
Qg
0.6
Qgs
0.2
Qgd
0.1
tD(ON)
2.7
tR
2.5
tD(OFF)
19
tF
11
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing.
Max
1.0 10
1.5 1.6 2.5 4.5 1.4
Unit
Test Condition
V VGS = 0V, ID = 250µA µA VDS = 50V, VGS = 0V µA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250µA
VGS = 10V, ID = 500mA Ω VGS = 4.5V, ID = 200mA
VGS = 2.5V, ID = 100mA
V VGS = 0V, IS = 500mA
pF
pF
VDS = 25V, VGS = 0V, f = 1.0MHz
pF
nC nC VGS = 4.5V, VDS = 10V,
ID = 250mA nC
ns
ns VDD = 30V, VGS = 10V, ns RG = 25Ω, ID = 200mA
ns
DMN53D0LDW
Document number: DS37072 Rev. 3 - 2
2 of 6 www.diodes.com.