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DMN53D0LDW Dataheets PDF



Part Number DMN53D0LDW
Manufacturers Diodes
Logo Diodes
Description N-CHANNEL MOSFET
Datasheet DMN53D0LDW DatasheetDMN53D0LDW Datasheet (PDF)

NEW PRODUCT DMN53D0LDW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 360mA 250mA Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.  DC-DC Converters  Power Management Functions  Battery Operated Systems and Solid-Sta.

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NEW PRODUCT DMN53D0LDW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 360mA 250mA Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.  DC-DC Converters  Power Management Functions  Battery Operated Systems and Solid-State Relays  Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc Features and Benefits  Dual N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/  An Automotive-Compliant Part is Available Under Separate Datasheet (DMN53D0LDWQ) Mechanical Data  Case: SOT363  Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208  Terminal Connections: See Diagram  Weight: 0.006 grams (Approximate) D2 G1 S1 ESD PROTECTED SOT363 Top View S2 G2 D1 Top View Internal Schematic Ordering Information (Note 4) Part Number DMN53D0LDW-7 DMN53D0LDW-13 Case SOT363 SOT363 Packaging 3000/Tape & Reel 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information MM5 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: I = 2021) M = Month (ex: 9 = September) Date Code Key Year Code 2014 … B … Month Code Jan Feb 1 2 DMN53D0LDW Document number: DS37072 Rev. 3 - 2 2021 I Mar 3 2022 J Apr 4 2023 K 2024 L 2025 M May Jun Jul 5 6 7 1 of 6 www.diodes.com 2026 N Aug 8 2027 O Sep 9 2028 P Oct O 2029 R 2030 S Nov Dec N D July 2021 © Diodes Incorporated NEW PRODUCT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain Source Voltage Gate-Source Voltage Drain Current (Note 5) Characteristic Symbol VDSS VGSS ID DMN53D0LDW Value Unit 50 V 20 V 360 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Value 310 411 -55 to +150 Unit mW C/W C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Symbol Min Typ BVDSS 50  IDSS   IGSS   VGS(TH) 0.8   1.0 RDS(ON)  1.0  1.4 Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VSD  0.8 Ciss  46 Coss  5.3 Crss  4.0 Qg  0.6 Qgs  0.2 Qgd  0.1 tD(ON)  2.7 tR  2.5 tD(OFF)  19 tF  11 Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. Max  1.0 10 1.5 1.6 2.5 4.5 1.4           Unit Test Condition V VGS = 0V, ID = 250µA µA VDS = 50V, VGS = 0V µA VGS = ±20V, VDS = 0V V VDS = VGS, ID = 250µA VGS = 10V, ID = 500mA Ω VGS = 4.5V, ID = 200mA VGS = 2.5V, ID = 100mA V VGS = 0V, IS = 500mA pF pF VDS = 25V, VGS = 0V, f = 1.0MHz pF nC nC VGS = 4.5V, VDS = 10V, ID = 250mA nC ns ns VDD = 30V, VGS = 10V, ns RG = 25Ω, ID = 200mA ns DMN53D0LDW Document number: DS37072 Rev. 3 - 2 2 of 6 www.diodes.com.


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