MITSUBISHI HVIGBT MODULES
CM1200HB-66H
HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar...
MITSUBISHI HVIGBT MODULES
CM1200HB-66H
HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar
Transistor) Modules INSULATED TYPE
CM1200HB-66H
q IC ................................................................ 1200A q VCES ....................................................... 3300V q Insulated Type q 1-element in a pack
APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57 ±0.25
190 171 57 ±0.25
57 ±0.25
6 - M8 NUTS C
C
C
C
G E
C
C
C
20
CM C
E
E
E
124 ±0.25 140
E
E
E
40
CIRCUIT DIAGRAM
E
G
20.25 41.25 3 - M4 NUTS 79.4 61.5 13 61.5 5.2 15 40 8 - φ7MOUNTING HOLES
38
HVIGBT MODULES (High Voltage Insulated Gate Bipolar
Transistor Modules)
Feb. 2000
5
LABEL
29.5
28
MITSUBISHI HVIGBT MODULES
CM1200HB-66H
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar
Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
Symbol VCES VGES IC ICM I E (Note 2) I EM(Note 2) P C (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass Conditions VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C, IGBT part Ratings 3300 ±20 1200 2400 1200 2400 15600 –40 ~ +150 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 2.2 Unit V V A A A A W °C °...
