MITSUBISHI IGBT MODULES
CM150DU-12H
HIGH POWER SWITCHING USE INSULATED TYPE
TC Measured Point
E F G E2 A B H J D C
G1 ...
MITSUBISHI IGBT MODULES
CM150DU-12H
HIGH POWER SWITCHING USE INSULATED TYPE
TC Measured Point
E F G E2 A B H J D C
G1 E1 G2 G2
U C1
3-M5 Nuts O P O Q
CM
C2E1
K
2 - Mounting Holes (6.5 Dia.)
V
L M N TAB#110 t=0.5 P S
R
T
E2 G2
Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each
transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM150DU-12H is a 600V (VCES), 150 Ampere Dual IGBT Module.
Type CM Current Rating Amperes 150 VCES Volts (x 50) 12
C2E1
E2
C1
E1 G1
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L Inches 3.7 3.15±0.01 1.89 0.94 0.28 0.67 0.91 0.91 0.43 0.71 0.16 Millimeters 94.0 80.0±0.25 48.0 24.0 7.0 17.0 23.0 23.0 11.0 18.0 4.0 Dimensions M N O P Q R S T U V Inches 0.47 0.53 0.1 0.63 0.98 Millimeters 12.0 13.5 2.5 16.0 25.0
1.18 +0.04/-0.02 30.0 +1.0/-0.5 0.3 0.83 0.16 0.51 7.5 21.2 4.0 13.0
Sep.1998
MITSUBISHI IGBT MO...
