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CM150DU-24F

Mitsubishi Electric Semiconductor

IGBT MODULES

MITSUBISHI IGBT MODULES CM150DU-24F HIGH POWER SWITCHING USE CM150DU-24F ¡IC ...........................................


Mitsubishi Electric Semiconductor

CM150DU-24F

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MITSUBISHI IGBT MODULES CM150DU-24F HIGH POWER SWITCHING USE CM150DU-24F ¡IC ................................................................... 150A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 93 ±0.25 14 14 Tc measured point 14 RTC E2 G2 6 C2E1 ±0.25 E2 RTC C1 G1 E1 6 48 CM CIRCUIT DIAGRAM C2E1 E2 C1 25 3-M6 NUTS 4-φ6. 5 MOUNTING HOLES 25 21.5 2.5 4 18 7 18 7 18 2.8 7.5 8.5 0.5 0.5 0.5 0.5 29 +1.0 –0.5 22 LABEL 4 Aug. 1999 G1 E1 15 62 E2 G2 MITSUBISHI IGBT MODULES CM150DU-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 150 300 150 300 600 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A W °C °C V Nm Nm g (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rt...




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