2SC2412KQLT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon 1 BASE 3 COLLECTOR 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C Collector power dissipation PC Junction temperature Tj Storage temperature T stg 50 V 60 V 7.0 V 150 mAdc 0.2 W 150 °C -55 ~+150 °C DEVICE MARKING 2SC2412K*LT1 =G1F ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Collector–Emitter Breakdown Voltage (IC = 1 mA) Emitter–Base Breakdown Voltage (IE = 50 µA) Collector–Base Breakdown Voltage (IC = 50 µA) Collector Cutoff Current (VCB = 60 V) Emitter cutoff current (VEB = 7 V) Collector-emitter saturation voltage (IC/ IB = 50 mA / 5m A) DC current transfer ratio (V CE = 6 V, I C= 1mA) Transition frequency (V CE = 12 V, I E= – 2mA, f =30MHz ) Output capacitance (V CB = 12 V, I E= 0A, f =1MHz ) Symbol V (BR)CEO V (BR)EBO V (BR)CBO I CBO I EBO V CE(sat) h FE fT C ob Min 50 7 60 — — — 120 — — h FE values are classified as follows: *Q R hFE 120~270 180~390 S 270~560 2SC2412K*LT1 3 1 2 CASE 318–07, STYLE 6 SOT– 23 (TO–236AB) Typ Max Unit — —V — —V — —V — 0.1 µA — 0.1 µA — 0.4 V –– 560 –– 180 –– MHz 2.0 3.5 pF M36–1/3 Fig.1 Grounded emitter propagation characteristics I C, COLLECTOR CURRENT (mA) T A = 100°C 25°C – 55°C 50 VCE= 6 V 20 10 50 2 1 0.5 0.2 0.1 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1.6 V BE , BASE TO ...