IGBT Module
MITSUBISHI IGBT MODULES
CM150E3U-24H
HIGH POWER SWITCHING USE INSULATED TYPE
TC Measured Point
A D F S(4 - Mounting Ho...
Description
MITSUBISHI IGBT MODULES
CM150E3U-24H
HIGH POWER SWITCHING USE INSULATED TYPE
TC Measured Point
A D F S(4 - Mounting Holes)
H B E T CM
3 - M6 Nuts
Q
Q
P
N
G
K
K
K
R M
C
L
Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel diode and an anode-collector connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking
E2 G2
C2E1
E2
C1
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H K Inches 4.25 2.44 3.66±0.01 1.88±0.01 0.87 0.16 0.24 0.71 Millimeters 108.0 62.0 93.0±0.25 48.0±0.25 22.0 4.0 6.0 18.0 Dimensions L M N P Q R S T Inches 0.87 0.33 0.10 0.85 0.98 0.11 0.25 Dia. 0.6 Millimeters 22.0 8.5 2.5 21.5 25.0 2.8 6.5 Dia. 15.15
Application: ٗ Brake Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM150E3U-24H is a 1200V (VCES), 150 Ampere IGBT Module.
Type CM Current Rating Amperes 150 VCES Volts (x 50) 24
1.14 +0.04/-0.02 29 +1.0/-0.5
Sep.1998
MITSUBISHI IGBT MODULES
CM150E3U-24H
HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings J...
Similar Datasheet
- CM150E3U-24H IGBT Module - Mitsubishi Electric Semiconductor
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