INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
22N10
·FEATURES ·Drain Current ID= 22...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
22N10
·FEATURES ·Drain Current ID= 22A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.08Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching
regulators ·Switching converters,motor drivers,relay drivers
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
100 ±30
V V
ID Drain Current-Continuous
22 A
IDM Drain Current-Single Plused
50 A
PD Total Dissipation @TC=25℃
100 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.5 ℃/W
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INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
22N10
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
CONDITIONS VGS= 0; ID=250µA VDS= VGS; ID=250µA IS= 22A ;VGS= 0 VGS= 10V; ID= 22A VGS= ±20V;VDS= 0 VDS=80V; VGS= 0
VGS=10V; ID=11A; VDD=50V; RL=4.55Ω
...