INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
22N50
·FEATURES ·Drain Current ID= 22...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
22N50
·FEATURES ·Drain Current ID= 22A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.25Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
500 ±30
V V
ID Drain Current-Continuous
22 A
PD Total Dissipation @TC=25℃
275 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
isc website:www.iscsemi.cn
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INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
22N50
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer capacitance
Coss Output Capacitance
CONDITIONS VGS= 0; ID=250µA VDS= VGE; ID=250µA IS= 22A ;VGS= 0 VGS= 10V; ID= 11A VGS= ±30V;VDS= 0 VDS=500V; VGS= 0
VDS=25V; VGS=0V; fT=1MHz
MIN TYPE MAX UNIT 500 V 2.0 4.0 V
1.5 V 0.25 Ω ±10 nA 50 µA 2630 27 pF 310
·
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
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