Document
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage
: VDSS= 180V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.15Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching regulators ·Switching converters, motor drivers, relay drivers
isc Product Specification
25N18
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
180 ±20
V V
ID Drain Current-Continuous
25 A
IDM Drain Current-Single Plused
60 A
PD Total Dissipation @TC=25℃
150 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 0.83 ℃/W
isc website:www.iscsemi.cn
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
25N18
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer capacitance
Coss Output Capacitance
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
CONDITIONS VGS= 0; ID=250µA VDS= VGS; ID=1mA IS= 12.5A ;VGS= 0 VGS= 10V; ID= 12.5A VGS= ±20V;VDS= 0 VDS=145V; VGS= 0
VDS=25V; VGS=0V; fT=1MHz
VGS=10V; ID=12.5A; VDD=100V; RG=50Ω
MIN TYPE MAX UNIT 180 V 2.0 4.0 V
1.4 V 0.15 Ω ±100 nA
1 µA 350 400 pF 900 225 80
ns 200 400
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
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