DMN63D8LV

NEW PRODUCT Product Summary V(BR)DSS 30V RDS(ON) 4.2Ω @ VGS = 5V 2.8Ω @ VGS = 10V ID TA = 25°C 200mA 260mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications DC-DC Converters Power management functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc DMN63D8LV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SOT563 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (approximate) SOT563 D2 G1 S1 ESD PROTECTED Top View S2 G2 D1 Top View Internal Schematic Ordering Information (Note 4) Notes: Part Number DMN63D8LV-7 DMN63D8LV-13 Case SOT563 SOT563 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Full...