IFN112

InterFET Product Folder Technical Support Order Now IFN112 IFN112 N-Channel JFET Features InterFET N0132H Geometry Low Noise: 1.5 nV/√Hz Typical High Gain: 12mS Typical RoHS Compliant SMT, TH, and Bare Die Package options. Applications Low-Noise, High Gain Replacement for Japanese 2SK112 Description The -50V InterFET IFN112 is a low noise high gain replacement for the Japanese 2SK112 JFET. Gate leakages are typically less than 50pA at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications. Gate/Case Drain 2 Source TO-18 Bottom View 3 1 Source 1 Drain 2 SOT23 Top View 3 Gate TO-92 Bottom View Gate 3 Drain 2 Source 1 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Ordering Information Custom Part and Binning Options Available Part Number Description IFN112 Through-Hole PN112 Through-Hole SMP112 Surface Mount 7“ Tape and Reel: Max 3,000 Pieces SMP112TR 13” Tape and Reel: Max 9,000 Pieces IFN112COT Chip Orientated Tray (COT Waffle Pack) IFN112CFT Chip Face-up Tray (CFT Waffle Pack) IFN112 Min Unit -50 V 1.2 mA -0.25 V 7 mS Case TO-18 TO-92 SOT23 SOT23 COT CFT Packaging Bulk Bulk Bulk Minimum 1,000 Pieces Tape and Reel 400/Waffle Pack 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application...