SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD
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Vishay General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
SMB (DO-214AA)
PRIMARY CHARACTERISTICS
VBR (uni-directional) VBR (bi-directional) VWM (uni-directional) VWM (bi-directional)
PPPM PD at TM = 50 °C PD at TA = 25 °C
TJ max. Polarity
6.5 V to 228 V 6.5 V to 145 V 5.0 V to 188 V 5.0 V to 120 V
600 W 5.0 W 1.0 W 150 °C Uni-directional, bi-directional
Package
SMB (DO-214AA)
DEVICES FOR BI-DIRECTIONAL APPLICATIONS
For bi-directional devices use CD suffix (e.g. SMBJ5.0CD). Electrical characteristics apply in both directions.
FEATURES
• Low profile package • Ideal for automated placement • ± 3.5 %: very tight VBR tolerance • Low leakage current • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFETs, signal lines of sensor units for consumer, computer, industrial, and telecommunication.
MECHANICAL DATA Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and industrial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test Polarity: for uni-directional types the band denotes cathode end, no cathode band on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
with a 10/1000 μs waveform
Peak pulse current
with a 10/1000 μs waveform
Power dissipation
TM = 50 °C TA = 25 °C
Operating junction and storage temperature range
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2 (2) Power dissipation mounted on infinite heatsink (3) Power dissipation mounted on minimum recommended pad layout
SYMBOL PPPM (1) IPPM (1)
PD (2) PD (3) TJ, TSTG
VALUE 600
See next table 5.0 1.0
-55 to +150
UNIT W A
W
°C
Revision: 16-Jan-18
1 Document Number: 87606
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
DEVICE MARKING
CODE
UNI BI
BREAKDOWN VOLTAGE VBR AT IT (1) (V)
MIN. MAX.
TEST CURRENT
IT (mA)
STAND-OFF VOLTAGE VWM (V)
MA.