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IS61VPS102418B

Integrated Silicon Solution

SINGLE CYCLE DESELECT STATIC RAM

IS61LPS51236B/IS61VPS51236B/IS61VVPS51236B IS61LPS102418B/IS61VPS102418B/IS61VVPS102418B 512K x36 and 1024K x18 18Mb SY...


Integrated Silicon Solution

IS61VPS102418B

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Description
IS61LPS51236B/IS61VPS51236B/IS61VVPS51236B IS61LPS102418B/IS61VPS102418B/IS61VVPS102418B 512K x36 and 1024K x18 18Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM AUGUST 2017 FEATURES Internal self-timed write cycle Individual Byte Write Control and Global Write Clock controlled, registered address, data and control Burst sequence control using MODE input Three chip enable option for simple depth expansion and address pipelining Common data inputs and data outputs Auto Power-down during deselect Single cycle deselect Snooze MODE for reduced-power standby JEDEC 100-pin QFP, 165-ball BGA and 119-ball BGA packages Power supply: LPS: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%) VPS: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%) VVPS: VDD 1.8V (± 5%), VDDQ 1.8V (± 5%) JTAG Boundary Scan for BGA packages Commercial, Industrial and Automotive temperature support Lead-free available For leaded options, please contact ISSI FAST ACCESS TIME DESCRIPTION The 18Mb product family features high-speed, lowpower synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPS/VPS/VVPS51236B are organized as 524,288 words by 36bits. The IS61LPS/VPS/VVPS102418B are organized as 1,048,576 words by 18bits. Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchron...




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